Anhydrous HF in-situ cleaning process of semiconductor processin

Details Anhydrous HF in-situ cleaning process of semiconductor processin Anhydrous HF in-situ cleaning process of semiconductor processin

1997-02-06

2000-08-01

Powell, William

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 2, 216 73, B08B 312, C03C 2300

Patent

active

060951583

ABSTRACT:
A method for removing glass deposition from a reactor chamber, at least one interior surface of the reactor chamber having the glass deposition deposited thereon. The invention includes introducing a gaseous cleaning mixture comprising an anhydrous hydrogen fluoride (HF) gas into the chamber interior. The invention further includes maintaining the chamber interior at a temperature of between about 0.degree. C. and about 300.degree. C., and removing a gaseous reaction byproduct from the chamber interior.

REFERENCES:
patent: 5100495 (1992-03-01), Ohmi et al.
patent: 5584963 (1996-12-01), Takahashi

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