Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2010-01-29
2011-10-11
Huff, Mark F (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
Reexamination Certificate
active
08034543
ABSTRACT:
A method for forming a semiconductor device is presented. The method includes providing a substrate having a photoresist thereon and transmitting a light source through a mask having a pattern onto the photoresist. The mask comprises a mask substrate having first, second and third regions, the third region is disposed between the first and second regions. The mask also includes a light reducing layer over the mask substrate having a first opening over the first region and a second opening over the second region. The first and second openings have layer sidewalls. The sidewalls of the light reducing layer are slanted at an angle less than 90 degrees from the plane of a top surface of the mask substrate. The method also includes developing the photoresist to transfer the pattern of the mask to the photoresist.
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SONEHARA JP-01-185632 (Abstract—pub—07—25—89—Translation).
Full Translation of previously cited Sonehara JP-01-185632 (published Jul. 25, 2009).
Hua-Yu Liu et al., The Application of Alternating Phase-Shifting Masks to 140nm Gate Patterning: Line Width Control of Improvements and Design Optimization, Proc. of SPIE, 1998, pp. 328-337, vol. 3236.
Chua Gek Soon
Lin Qunying
Quan Chenggen
Tan Sia Kim
Tay Cho Jui
GLOBAL FOUNDRIES Singapore Pte. Ltd.
Horizon IP Pte Ltd.
Huff Mark F
Ruggles John
LandOfFree
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