Angled implantation for deep submicron device optimization

Details Angled implantation for deep submicron device optimization Angled implantation for deep submicron device optimization

2011-02-08

2011-02-08

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S302000, C438S369000, C438S514000, C438S525000, C438S531000, C257S547000, C257SE21618, C257SE21633

Reexamination Certificate

active

07883946

ABSTRACT:
A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second region that includes a polysilicon well of a second dopant type and a gate of a first dopant type. The hard mask over the first region is removed. Angled implantation of the first dopant type is performed to form pockets under the gate of the second dopant type.

REFERENCES:
patent: 6489223 (2002-12-01), Hook et al.
patent: 6562697 (2003-05-01), Cho et al.
patent: 6876017 (2005-04-01), Goodner
patent: 7144782 (2006-12-01), Ehrichs
patent: 2002/0000664 (2002-01-01), Cheng et al.
patent: 2002/0074612 (2002-06-01), Bulucea et al.
patent: 2007/0072351 (2007-03-01), Ishibashi
patent: 2008/0012052 (2008-01-01), Menut et al.
patent: 2009/0091037 (2009-04-01), Assefa et al.
patent: 2009/0140350 (2009-06-01), Zhu

Affiliated with

Also associated with

Rating

Angled implantation for deep submicron device optimization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Angled implantation for deep submicron device optimization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Angled implantation for deep submicron device optimization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2623941