Angled implant in a fabrication technique to improve...

Details Angled implant in a fabrication technique to improve... Angled implant in a fabrication technique to improve...

2006-12-12

2006-12-12

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000

Reexamination Certificate

active

07148534

ABSTRACT:
Ion implantation may be used to break up a dielectric layer that forms during the fabrication of a memory array. More specifically, during the fabrication of wordline stacks, a nitride layer may form between the polysilicon layer and the conductive metal layers above the polysilicon layer. While the nitride layer may be desirable during the fabrication process, it may inhibit electrical conductivity between the polysilicon layer and the conductive metal layers. A two step etch process may be implemented wherein the wordline stacks are etched into the polysilicon layer in the first etch and etched down to the substrate during the second etch. An angled implant may be used to break up the nitride layer between the first etch and the second etch.

REFERENCES:
patent: 6682997 (2004-01-01), Lawlor
patent: 6703659 (2004-03-01), Chan et al.
patent: 2002/0086503 (2002-07-01), Schuegraf et al.
patent: 2003/0003657 (2003-01-01), Kim et al.
patent: 2003/0062566 (2003-04-01), Schuegraf et al.
Byun, Jeong Soo, “Reduction of Dichlorosiliare-Based Tungsten Silicide Resistivity by Amorphization and Its Applicability as an Electrode,” Journal of the Electrochemical Society, 146 (6) 22612269, 1999.

Affiliated with

Also associated with

Rating

Angled implant in a fabrication technique to improve... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Angled implant in a fabrication technique to improve..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Angled implant in a fabrication technique to improve... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3675492