Angled implant for trench isolation

Details Angled implant for trench isolation Angled implant for trench isolation

2011-04-05

2011-04-05

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S374000, C257S446000, C257SE27130, C257SE27133, C257S233000, C438S042000, C438S221000, C438S435000, C438S525000

Reexamination Certificate

active

07919797

ABSTRACT:
A trench isolation having a sidewall and bottom implanted region located within a substrate of a first conductivity type is disclosed. The sidewall and bottom implanted region is formed by an angled implant, a 90 degree implant, or a combination of an angled implant and a 90 degree implant, of dopants of the first conductivity type. The sidewall and bottom implanted region located adjacent the trench isolation reduces surface leakage and dark current.

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