Angle defined trench conductor for a semiconductor device

Details Angle defined trench conductor for a semiconductor device Angle defined trench conductor for a semiconductor device

1995-05-19

1997-03-11

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257244, 257734, 257754, H01L 2318, H01L 2352

Patent

active

056104413

ABSTRACT:
Polysilicon in a trench is etched at an angle to produce a conductor within the trench that has shape characteristics which approximate the shadow of the side wall of the trench closest the beam source. Specifically, when the first side wall is closest to the beam source and the second side wall is furthest from the beam source, the polysilicon on the first side wall is almost as high as the first side wall, while the polysilicon on the more exposed side wall is considerably lower than the first side wall and approximates the shadow of the first side wall on the second side wall relative to the beam. The polysilicon in the trench may be in the shape of a solid angled block approximating the shadow line from the top of side wall to the shadow line on side wall however, it is preferred that the polysilicon take the form of a conformal layer in trench prior to etching such that the polysilicon ultimately has an angled "U" shape which approximates the shadow line. Contact is made to the polysilicon using strap that electrically connects the side wall with the polysilicon. Strap is sized such that it does not extend to the opposite side wall of trench, thereby avoiding short circuits. Having the polysilicon approximate the shadow line of the etch permits narrowing the distance between adjacent straps and in an array without the risk of creating a short.

REFERENCES:
patent: 5014099 (1991-05-01), McElroy

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