Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2008-01-29
2008-01-29
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S017000, C216S041000, C216S088000, C438S689000, C438S692000
Reexamination Certificate
active
11048611
ABSTRACT:
A method of making a mold includes forming spaced mold cavities in a mold body. The mold cavities include geometrically similar portions, but have respective depths below an initial reference surface that vary as a function of position along a particular direction. The mold cavities can be formed using anisotropic etching of preferred crystal directions in single crystal materials such as silicon. A portion of the mold material adjacent the initial reference surface is removed to expose a new reference surface at a tilt angle with respect to the initial reference surface. The modified mold cavities have their respective axes at a new desired tilt angle relative to the new reference surface.
REFERENCES:
patent: 6156243 (2000-12-01), Kosuga et al.
patent: 6392313 (2002-05-01), Epstein et al.
patent: 2002/0090580 (2002-07-01), Asanuma et al.
patent: 2002/0093906 (2002-07-01), Deno et al.
Ahmed Shamim
Metadigm LLC
Townsend and Townsend / and Crew LLP
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