Analysis of Rheed data from rotating substrates

Details Analysis of Rheed data from rotating substrates Analysis of Rheed data from rotating substrates

1992-01-27

1993-08-24

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156611, 156612, 156DIG102, 437105, 422105, 118716, 118719, C30B 2516

Patent

active

052385256

ABSTRACT:
A video tracking system and a program employing frequency-domain analysis for extracting RHEED intensity oscillation data for film growth on rotating substrates. In initial experiments on GaAs growth, excellent (2%) agreement has been obtained between oscillation frequencies measured for static substrates and substrates with rotation rates as high as 10 rpm. The capability of performing RHEED analysis on rotating substrates could lead to improvements in the quality of complex epitaxial structures and interfaces for which interrupting rotation can have a deleterious effect.

REFERENCES:
patent: 4508590 (1985-04-01), Kaplan et al.
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 4812650 (1989-03-01), Eckstein et al.
patent: 4855013 (1989-08-01), Ohta et al.
patent: 4878989 (1989-11-01), Purdes
patent: 4931132 (1990-06-01), Aspnes et al.
patent: 5091320 (1992-02-01), Aspnes et al.
patent: 5122222 (1992-06-01), Turner et al.
Sakamoto et al., in "Thin Film Growth Techniques for Low-Dimensional Structures", edited by R. F. C. Farrow and S. S. P. Parkin (Plenum, NY, 1986), pp. 225-245.
"Current Understanding and Applications of the RHEED Intensity Oscillation Technique", Dobson et al., Journal of Crystal Growth 81 (1987) pp. 1-8.
"The Application of RHEED Intensity Effects of Interrupted Growth and Interface Formation During MBE Growth of GaAs/(Al,Ga)As Structures", Joyce et al., Appl. Phys. A 45, (1968) pp. 255-260.
"Frequency-Domain Analysis of Time-Dependent Reflection High-Energy Electron Diffraction Intensity Data", Turner et al., J. Vac. Sci. Technol. B 8(2), Mar/Apr. 1990, pp. 283--287.
"On the Accuracy of MBE Cell-Temperature Calibration Investigated by Frequency Domain Analysis of RHEED Intensity Oscillations", Kraus et al., Euro MBE 1991, Tampere, Jan. 30, 1991.
"Effects of Diffraction Conditions and Processes on RHEED Intensity Oscillations During the MBE Growth of GaAs", Neave et al., Appl. Phys. A 42, (1987), pp. 317-326.
"Multiple Reflection High-Energy Electron Diffraction Beam Intensity Measurement System", Resh et al., Rev. Sci. Instrum. 61 (2) Feb. 1990, pp. 771-774.
A. J. SpringThorpe and A. Majeed, "Epitaxial Growth Rate Measurements During Molecular Beam Epitaxy", J. Vac. Sci. Technol., B 8(2) (Mar./Apr. 1990).

Affiliated with

Also associated with

Rating

Analysis of Rheed data from rotating substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Analysis of Rheed data from rotating substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Analysis of Rheed data from rotating substrates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-825982