Analysis method for semiconductor device, analysis system...

Data processing: measuring – calibrating – or testing – Testing system – Of circuit

Reexamination Certificate

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C702S183000, C714S048000, C700S073000, C700S121000

Reexamination Certificate

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06975953

ABSTRACT:
An analysis method for a semiconductor device includes measuring electrical characteristics of TEGs fabricated on a semiconductor substrate; classifying the TEGs into a first TEG category where a systematic failure has not occurred and a second TEG category where the systematic failure has occurred based on the electrical characteristics; creating a first comparison Mahalanobis reference space using first parameters of the TEGs in the first TEG category from among parameters of the TEGs expressed as numerical values; calculating a first comparison Mahalanobis distance of the first parameters and a second comparison Mahalanobis distance of second parameters of the TEGs in the second TEG category by using the first comparison Mahalanobis reference space; and comparing the first and second comparison Mahalanobis distances.

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patent: 6782348 (2004-08-01), Ushiku
patent: 6862484 (2005-03-01), Hayashi
patent: 10-270521 (1998-10-01), None
patent: 2000-110867 (2000-04-01), None
patent: 2001-110867 (2001-04-01), None
patent: 2002-203882 (2002-07-01), None
patent: 2003-037143 (2003-02-01), None
Taguchi, “Mathematics for Quality Engineering,” Japanese Standards Association (1999), pp. 131-156.
Notice of Grounds for Rejection, issued by the Japanese Patent Office, mailed Jul. 5, 2005, in Japanese Application No. P2003-048090, and English-language translation thereof.

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