Analogue misfet with threshold voltage adjuster

Details Analogue misfet with threshold voltage adjuster Analogue misfet with threshold voltage adjuster

1997-06-30

2000-07-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257379, H01L 2976

Patent

active

060842733

ABSTRACT:
A threshold voltage or a channel potential of a MIS device can be set in an analogue fashion. A MIS device includes a multi-layer structure having a gate insulating film in which an oxide film, a nitride film and an oxide film are laminated in that order. The threshold voltage or channel potential of the MIS device can be controlled by an amount of electric charges injected into the nitride film.

REFERENCES:
patent: 3591852 (1971-07-01), Chen
patent: 3609414 (1971-09-01), Pleshko et al.
patent: 3945031 (1976-03-01), Kahng et al.
patent: 3956025 (1976-05-01), Statz et al.
patent: 4232221 (1980-11-01), Millea et al.
patent: 4890144 (1989-12-01), Teng et al.
patent: 5436481 (1995-07-01), Egawa et al.
patent: 5481129 (1996-01-01), DeJong et al.
IBM Technical Disclosure Bulletin, "Alteration of Threshold Voltage of Enhancement Field-Effect Transistors", vol. 29, No. 7, p. 3202, Dec. 1, 1986.
Patent Abstracts of Japan, vol. 16, No. 8, Mitsubishi Electric Corp., (E-1152), Jan. 10, 1992 & JP 03 230566A, Oct. 14, 1991.

Affiliated with

Also associated with

Rating

Analogue misfet with threshold voltage adjuster does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Analogue misfet with threshold voltage adjuster, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Analogue misfet with threshold voltage adjuster will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1488864