Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-02-21
1996-01-02
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257363, 257379, 257358, 257486, H01L 298605
Patent
active
054811295
ABSTRACT:
A two-step analog-to-digital converter and BiCMOS fabrication method. The fabrication method provides pseudosubstrate isolation of digital CMOS devices from the analog devices. The converter uses NPN current switching in a flash analog-to-digital converter and in a digital-to-analog converter for low noise operation. CMOS digital error correction and BiCMOS output drivers provide high packing density plus large output load handling. Timing control aggregates switching events and puts them into intervals when noise sensitive operations are inactive. The fabrication method uses a thin epitaxial layer with limited thermal processing to provide NPN and PNP devices with large breakdown and Early voltages. Laser trimmed resistors provide small long term drift due to dopant stabilization in underlying BPSG and low hydrogen nitride passivation.
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Bacrania Kantilal
Church Michael D.
DeJong Glenn A.
Fisher Gregory J.
Gasner John T.
Harris Corporation
Hille Rolf
Williams Alexander Oscar
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