Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2011-08-09
2011-08-09
Sofocleous, Alexander (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S185030, C365S185170, C365S185200
Reexamination Certificate
active
07995412
ABSTRACT:
An analog-to-digital conversion window is defined by reference voltages stored in reference memory cells of a memory device. A first reference voltage is read to define an upper limit of the conversion window and a second reference voltage is read to define a lower limit of the conversion window. An analog voltage representing a digital bit pattern is read from a memory cell and converted to the digital bit pattern by an analog-to-digital conversion process using the conversion window as the limits for the sampling process. This scheme helps in real time tracking of the ADC window with changes in the program window of the memory array.
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Inoue et al. “NAND Flash Applications Design Guide: System Solutions from Toshiba America Electronic Components, Inc.” Apr. 2003. pp. 1-29.
Hoei Jung-Sheng
Roohparvar Frankie F.
Sarin Vishal
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Sofocleous Alexander
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