Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-23
1999-11-30
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257298, 257372, 257378, 257393, 257394, 327534, H01L 2972
Patent
active
059947446
ABSTRACT:
An analog switching circuit comprises an insulated-gate field-effect transistor (Q20) having two n-type input-side and outpu-side semiconductor regions (201, 202) and a p-type semiconductor substrate region 203, for controlling conductiveness between an input terminal (IN) and an output terminal (OUT) based on a gate potential. A surge pulse detecting circuit (1020), responsive to an electric potential (Vi) of the input terminal (IN), produces a detection signal of a surge pulse equivalent to a forward bias of a PN junction formed between the semiconductor substrate region (203) and the input-side semiconductor region (201). A substrate potential setting circuit (1010) varies an electric potential of the semiconductor substrate region (203) in response to the electric potential (Vi) of the input terminal (IN) when aby detection signal is produced. Furthermore, a gate potential control circuit (1030) varies the gate potential of the insulated-gate field-effect transistor (Q20) in the same direction as the electric potential of the semiconductor substrate region (203) when the detection signal is produced.
REFERENCES:
patent: 4511814 (1985-04-01), Matsuo et al.
patent: 5321650 (1994-06-01), Kikuchi et al.
Ban Hiroyuki
Hayakawa Junji
Katayama Tetsuya
Miki Takeshi
Denso Corporation
Wojciechowicz Edward
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