Analog phase change memory

Details Analog phase change memory Analog phase change memory

2003-08-04

2008-12-30

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S045000, C365S151000, C365S113000, C365S176000

Reexamination Certificate

active

07471552

ABSTRACT:
An analog memory may be formed using a phase change material. The phase change material may assume one of a number of resistance states which defines a specific analog characteristic to be stored.

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Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C.., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Jeong, U.I., Jeong, H.S. and Kim, Kinam, “Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors,” presented at 2003 19th IEEE Non-Volatile Semiconductor Memory Workshop, Monterey, California, Feb. 20-26, 2003.
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