Analog capacitor having at least three high-k-dielectric...

Details Analog capacitor having at least three high-k-dielectric... Analog capacitor having at least three high-k-dielectric...

2006-08-15

2006-08-15

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257SE29345, C361S312000

Reexamination Certificate

active

07091548

ABSTRACT:
There are provided an analog capacitor having at least three high-k dielectric layers, and a method of fabricating the same. The analog capacitor includes a lower electrode, an upper electrode, and at least three high-k dielectric layers interposed between the lower electrode and the upper electrode. The at least three high-k dielectric layers include a bottom dielectric layer contacting the lower electrode, a top dielectric layer contacting the upper electrode, and a middle dielectric layer interposed between the bottom dielectric layer and the top dielectric layer. Further, each of the bottom dielectric layer and the top dielectric layer is a high-k dielectric layer, the absolute value of the quadratic coefficient of VCC thereof being relatively low compared to that of the middle dielectric layer, and the middle dielectric layer is a high-k dielectric layer having a low leakage current compared to those of the bottom dielectric layer and the top dielectric layer. Therefore, with use of the at least three high-k dielectric layers, the VCC characteristics and the leakage current characteristics of the analog capacitor can be optimized.

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