Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-02-04
1999-01-19
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257445, 257448, H01L 31113, H01L 27146
Patent
active
058616454
ABSTRACT:
An amplifying type solid-state imaging device having a transistor formed on a semiconductor base and a charge release portion which stores a signal charge which is generated by light incident on the transistor and outputs a change of an electrical signal in accordance with the stored charge. The transistor includes: a first gate region including a portion for storing the signal charge therein and a first gate electrode formed on the semiconductor base surface; and a source and a drain formed of impurity layers of a higher concentration than the semiconductor base concentration. The charge release portion includes: a second gate region including a portion in the vicinity of the semiconductor base surface, and a second gate electrode formed via an insulating film on the semiconductor base surface; and a drain for charge discharge formed of an impurity layer of a higher concentration than the semiconductor base concentration. The stored signal charge is released to the drain for charge discharge of the charge release portion.
REFERENCES:
patent: 4589027 (1986-05-01), Nakamura et al.
patent: 4857981 (1989-08-01), Matsumoto et al.
patent: 4929994 (1990-05-01), Matsumoto
patent: 5172249 (1992-12-01), Hashimoto
patent: 5285091 (1994-02-01), Hamasaki
patent: 5317174 (1994-05-01), Hynecek
patent: 5430312 (1995-07-01), Yamada
patent: 5486711 (1996-01-01), Ishida
J. Hynecek, A New Device Architecture Suitable for High-Resolution and High-Performance Image Sensors, IEEE Transactions on Electron Devices, vol. 35, No. 5, May 1988, pp. 646-652.
K. Matsumoto, et al., The Operation Mechanism of a Charge Modulation Device (CMD) Image Sensor, IEEE Transactions on Electron Devices, vol. 38. No. 5, May 1991, pp. 989-998.
J. Hynecek, BCMD--An Improved Photosite Structure for High-Density Image Sensors, IEEE Transactions on Electron Devices, vol. 35, No. 5, May 1991, pp. 1011-1020.
E. Fossum, CMOS Image Sensors: Electronic Camera on a Chip, IEDM, 1995, pp. 17-25.
Kudo Hiroaki
Watanabe Takashi
Conlin David G.
Michaelis Brian L.
Munson Gene M.
Sharp Kabushiki Kaisha
LandOfFree
Amplifying type solid-state imaging device and amplifying type s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Amplifying type solid-state imaging device and amplifying type s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amplifying type solid-state imaging device and amplifying type s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1248690