Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-31
2006-01-31
Wilson, Christian D. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S183100, C257S184000, C257S238000, C257S290000, C257S291000, C257S443000
Reexamination Certificate
active
06992341
ABSTRACT:
There is provided an amplifying solid-state image pickup device capable of improving S/N and maintaining a charge-voltage conversion efficiency high. In the amplifying solid-state image pickup device, signal charges of a plurality of photodiodes1are added up on an input side of a switched capacitor amplification part20via the transfer transistors2.
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I. Inoue, et al.,New LV-BPD(Low Voltage Buried Photo-Diode)for CMOS Imager, IEDM 99, pp. 883-886 (1999).
Conlin David G.
Edwards Angell Palmer & & Dodge LLP
Menz Douglas M.
Sharp Kabuishiki Kaisha
Tucker David A.
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