Amplifying solid-state image pickup device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S183100, C257S184000, C257S238000, C257S290000, C257S291000, C257S443000

Reexamination Certificate

active

06992341

ABSTRACT:
There is provided an amplifying solid-state image pickup device capable of improving S/N and maintaining a charge-voltage conversion efficiency high. In the amplifying solid-state image pickup device, signal charges of a plurality of photodiodes1are added up on an input side of a switched capacitor amplification part20via the transfer transistors2.

REFERENCES:
patent: 5739562 (1998-04-01), Ackland et al.
patent: 5955753 (1999-09-01), Takahashi
patent: 6037577 (2000-03-01), Tanaka et al.
patent: 6836291 (2004-12-01), Nakamura et al.
patent: 6903771 (2005-06-01), Sakuragi
patent: 09-046596 (1997-02-01), None
I. Inoue, et al.,New LV-BPD(Low Voltage Buried Photo-Diode)for CMOS Imager, IEDM 99, pp. 883-886 (1999).

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