Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1996-07-23
1998-05-26
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Differential sensing
365203, 365205, 36518907, 327 52, G11C 702
Patent
active
057577110
ABSTRACT:
The potential of a data line is precharged to an H level by a P channel MOS transistor rendered conductive by a precharge signal. The potential of the data line is not driven by a differential amplifier circuit until the difference between the potential of the output of the differential amplifier circuit providing a corresponding signal and the potential (H level) of the data line become the level of a threshold voltage Vth(n) of an N channel MOS transistor. Therefore, erroneous data will not be provided to the data line even in the case of insufficient equalization of an I/O line pair or when there is an offset in the differential amplifier circuit.
REFERENCES:
patent: 5504443 (1996-04-01), Gross et al.
patent: 5519662 (1996-05-01), Ishibashi et al.
patent: 5581511 (1996-12-01), Gaultier et al.
Asakura Mikio
Furutani Kiyohiro
Nakaoka Yoshito
Hoang Huan
Mitsubishi Denki & Kabushiki Kaisha
Nelms David C.
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