Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-07-29
2008-07-29
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S422000
Reexamination Certificate
active
07405085
ABSTRACT:
An amorphous soft magnetic thin film material for forming shielding and keeper applications in MRAM devices. The amorphous soft magnetic material may be deposited using Physical Vapor Deposition (PVD) in the presence of a magnetic field, in order to form shielding layers and keepers in a multi-layer metallization process. The soft magnetic material may be an amorphous metallic alloy, such as CoZrX, where X may be Ta, Nb, Pd and/or Rh.
REFERENCES:
patent: 4972285 (1990-11-01), Otomo et al.
patent: 6413788 (2002-07-01), Tuttle
Gutkin Michael
Kools Jacques Constant Stefan
Mao Ming
Schneider Thomas
Wang Jinsong
DLA Piper (US) LLP
Menz Douglas M
Veeco Instruments Inc.
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