Amorphous-silicon thin film transistor and shift resister...

Details Amorphous-silicon thin film transistor and shift resister... Amorphous-silicon thin film transistor and shift resister...

2005-06-14

2005-06-14

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S052000, C257S059000, C438S149000, C438S479000, C438S482000, C438S517000

Reexamination Certificate

active

06906385

ABSTRACT:
An amorphous-silicon thin film transistor and a shift resister shift resister having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced apart from a substrate by a first distance. The second conductive region is formed on a second plane spaced apart from the substrate by a second distance. The second conductive region includes a body conductive region and two hand conductive regions elongated from both ends of the body conductive region to form an U-shape. The third conductive region is formed on the second plane. The third conductive region includes an elongated portion. The elongated portion is disposed between the two hand conductive regions of the second conductive region. The amorphous-silicon TFT and the shift resister having the amorphous TFT reduce a parasitic capacitance between the gate electrode and drain electrode.

REFERENCES:
patent: 5656824 (1997-08-01), den Boer et al.
patent: 5877512 (1999-03-01), Kim
patent: 6274884 (2001-08-01), Lee et al.
patent: 6670708 (2003-12-01), Choo et al.
patent: 6774396 (2004-08-01), Chang et al.

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