Amorphous silicon TFT

Details Amorphous silicon TFT Amorphous silicon TFT

1996-01-24

1999-07-13

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 59, 257 62, 257 66, 257 72, H01L 2900

Patent

active

059230509

ABSTRACT:
An amorphous silicon thin-film transistor as a switching element for a thin-film transistor liquid crystal display, having improved characteristics by making better an ohmic contact layer and an active layer, and a method of fabricating the same are provided. A wide energy-band gap .mu.c-Si(:Cl) fabricated using a mixed gas including SiH.sub.2 Cl.sub.2 is used as the ohmic contact layer, so that yield and productivity can be improved. The active layer is formed of .mu.c-Si:H(:Cl) with low hydrogen content and high stability. Off-current during illumination is sharply decreased, to thereby remarkably reduce leakage current when illumination is performed by backlighting.

REFERENCES:
patent: 4625224 (1986-11-01), Nakagawa et al.
patent: 4949141 (1990-08-01), Busta
patent: 5565691 (1996-10-01), Arai et al.

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