Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-11-16
1994-03-01
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257458, H01L 2714, H01L 3100
Patent
active
052910369
ABSTRACT:
A photosensor device includes doped and undoped hydrogenated amorphous silicon layers adjacent each other and sandwiched between a conductive layer on one side and a metal layer on the other side with the sensor having been annealed under a hydrogen atmosphere and exhibiting low dark currents. The photosensor device is particularly useful as an X-ray image sensing device with the addition of a luminescent layer having at least one X-ray phosphor.
REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4069355 (1978-01-01), Lubowski et al.
patent: 4200473 (1980-04-01), Carlson
patent: 4499331 (1985-02-01), Hamakawa
patent: 4607164 (1986-08-01), Kubota et al.
patent: 4660095 (1987-04-01), Cannella et al.
patent: 4672454 (1987-06-01), Cannella et al.
patent: 4785186 (1988-11-01), Street et al.
patent: 4788582 (1988-11-01), Yamamoto et al.
patent: 4799094 (1989-01-01), Rougeot
patent: 4880987 (1989-11-01), Hosoi et al.
Carlson et al, "Amorphous Silicon Solar Cell", Applied Physics Letters, vol. 28, No. 11, pp. 671-673, Jun. 1, 1976.
Nemanich, "Schottky Barriers on a-Si:H", Semiconductors and Semimetals, vol. 21, Part C, pp. 375-406, 1984.
Nemanich et al, "Initial Reactions at the Interface of Pt and Amorphous Silicon", J. Vac. Sci. Technol. B, pp. 519-523, 1983.
Thompson et al, "Silicide Formation in Pd-a-Si:H Schottky Barriers", Appl. Phys. Lett., pp. 274-276, Aug. 1, 1981.
Deneuville et al, "Influence of Preparation Conditions on Forward-Bias Currents of Amorphous Silicon Schottky Diodes", J. Appl. Phys., pp. 1414-1421, Mar. 1979.
Wronski et al, "Surface States and Barrier Heights of Metal-Amorphous Silicon Schottky Barriers", Solid State Communications, vol. 23, pp. 421-424, 1977.
Mori Franco A.
Tait William C.
Tran Nang T.
James Andrew J.
Meier Stephen D.
Minnesota Mining and Manufacturing Company
LandOfFree
Amorphous silicon sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Amorphous silicon sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amorphous silicon sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-579953