Amorphous silicon photoelectric device

Details Amorphous silicon photoelectric device Amorphous silicon photoelectric device

1989-02-10

1992-08-18

Jackson, Jr., Jerome

357 2, 357 4, H01L 2714, H01L 3106

Patent

active

051403978

ABSTRACT:
A photoelectric device suitable for use as an image sensor includes a body of amorphous silicon and a pair of electrodes sandwiching the body. The amorphous silicon body includes at least one kind of oxygen, carbon, and nitrogen atoms and it has an ability to exhibit a predetermined level of photoconductivity for an optical bandgap of 2.0 eV or more. The amorphous silicon body may have either a mono-layered structure or a multi-layered structure. In the latter case, the body may have a p-i-n structure.

REFERENCES:
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patent: 4476346 (1984-10-01), Tawada et al.
patent: 4557987 (1985-12-01), Shirai et al.
patent: 4738729 (1988-04-01), Yoshida et al.
patent: 4969025 (1990-11-01), Yamamoto et al.

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