Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-10-26
2000-08-29
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257139, 257341, 257152, 257330, H01L 29745, H01L 2978
Patent
active
061112909
ABSTRACT:
In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n.sup.- silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.
REFERENCES:
patent: 4571512 (1986-02-01), Schutten
patent: 5241194 (1993-08-01), Baliga
patent: 5623152 (1997-04-01), Majumdar
patent: 5703384 (1997-12-01), Brunner
patent: 5864159 (1999-01-01), Takahashi
patent: 5895951 (1999-04-01), So et al.
Ken'ichi Matsushita et al., "Blocking Voltage Design Consideration for Deep Trench MOS Gate High Power Devices", Proceeding of 1995 International Symposium on Power Semiconductor Devices & Ics, Yokohama, pp. 256-260.
Mitsuhiko Kitagawa et al., "4500 V IEGTs having Switching Characteristics Superior to GTO", Proceeding of 1995 International Symposium on Power Semiconductor Devices & ICs, Yokohama, pp. 486-491.
Nakamura Katsumi
Uenishi Akio
Jackson, Jr. Jerome
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Semiconductor device having high breakdown voltage and method of does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having high breakdown voltage and method of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having high breakdown voltage and method of will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1252658