Amorphous silicon photodiode with sloped sidewalls and method of

Details Amorphous silicon photodiode with sloped sidewalls and method of Amorphous silicon photodiode with sloped sidewalls and method of

1992-09-24

1994-12-06

Rosasco, Steve

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430313, 430314, 257 52, 156643, 156646, G03C 500

Patent

active

053709721

ABSTRACT:
Solid state photodetectors having amorphous silicon photodiode bodies with sloped sidewalls allowing for deposition of high integrity conformal layers thereover are produced by etching the amorphous silicon in a mostly anisotropic etchant in a reactive ion etcher in which the pressure of the etchant is controlled. A photoresist mask having sloped sidewalls is formed over the amorphous silicon to be etched and the pressure of the etchant is selected to produce the desired slope of the sidewall in the photodetector body; at lower pressures a smaller slope is produced in the silicon and at higher pressures a steeper slope is produced in the silicon.

REFERENCES:
patent: 4933209 (1990-06-01), Anthony et al.
patent: 5100505 (1992-03-01), Cathey, Jr.
"Dry Etching of Tapered Contact Holes Using Multilayer Resist," R. J. Saia and B. Gorowitz, vol. 132, No. 8, Journal of the Electrochemical Society, pp. 1954-1957, Aug. 1985.

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