Amorphous silicon crystallization method

Details Amorphous silicon crystallization method Amorphous silicon crystallization method

2006-03-21

2006-03-21

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S482000

Reexamination Certificate

active

07015123

ABSTRACT:
A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon. The mask includes a light absorptive portion for blocking a laser beam and first and second light-transmitting portions each having an echelon formation with a tier-shaped outline. The first and second light-transmitting portions pass a laser beam and include a plurality of adjacent rectangular-shaped patterns that comprise the echelon formation. The second light-transmitting portion is located between the first light-transmitting portions and has fewer shaped-shaped patterns than the first light-transmitting portions. In operation, the mask moves transversely by no more than the width of the shaped-shaped patterns as a laser performs SLS crystallization. The first and second light-transmitting portions control grain growth such that high quality polycrystalline silicon is formed.

REFERENCES:
patent: 6262845 (2001-07-01), Sweatt
patent: 6726768 (2004-04-01), Yoon
patent: 2002/0083557 (2002-07-01), Jung
patent: 2002/0168577 (2002-11-01), Yoon
patent: 2003/0128917 (2003-07-01), Turpin et al.

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