Amorphous semiconductor threshold switch volatile memory cell

Details Amorphous semiconductor threshold switch volatile memory cell Amorphous semiconductor threshold switch volatile memory cell

2009-12-14

2011-12-20

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S230090, C365S230010

Reexamination Certificate

active

08081506

ABSTRACT:
A voltage memory switch may be formed of an amorphous semiconductor threshold switch and a select device. The amorphous threshold switch may be latched into one of two different current conducting levels. Then, in some embodiments, a relatively dense memory array can be achieved by maintaining an appropriate bias on the cell to prevent it from losing the programmed state.

REFERENCES:
patent: 2008/0117669 (2008-05-01), Fuji et al.
patent: 2009/0067229 (2009-03-01), Kang et al.

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