Amorphous semiconductor, amorphous semiconductor device using hy

Details Amorphous semiconductor, amorphous semiconductor device using hy Amorphous semiconductor, amorphous semiconductor device using hy

1992-04-07

1993-11-23

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

257 52, 257 53, 257 59, 257 55, 437101, 136258, H01L 4500

Patent

active

052647102

ABSTRACT:
Amorphous semiconductor thin film is exposed to an atmosphere of hydrogen radical during or after the formation of thin film, or is subject to light irradiation having a density of not less than 10 W/cm.sup.2 at a wavelength of 300 to 700 nm during the formation of the thin film. The obtained thin film has improved, i.e. small, photo deterioration. The semiconductor device using the above thin film is preferably applied to solar cells or thin film transistors.

REFERENCES:
patent: 4491626 (1985-01-01), Kawamura et al.
patent: 4532199 (1985-07-01), Ueno et al.
patent: 4615905 (1986-10-01), Ovshinsky et al.
patent: 4839240 (1989-06-01), Shimizu et al.
patent: 4885614 (1989-12-01), Furukawa et al.
patent: 4954182 (1990-09-01), Ovshinsky et al.
patent: 5007971 (1991-04-01), Kanai et a.
Yamanaka et al., "High-Performance Hydrogenated Amorphous Silicon-Germanium Solar Cells Fabricated by Photochemical Vapor Deposition," Japanese Jour. of Appl. Phys., vol. 26, No. 7, Jul. 1987, pp. 1107-1111.
Watanabe et al., "Chemical Vapor Deposition of a-SiGe:H Films Utilizing A Microwave-Excited Plasma," Japanese Jour. of Applied Physics, vol. 26, No. 4, Apr. 1987, pp. 1288-1290.
Mackenzie et al., "Structural, Electrical, and Optical Properties of a-Si.sub.1-x Ge.sub.x :H and An Inferred Electronic Band Structure," Physical Review B, vol. 31, No. 4, Feb. 15, 1985, pp. 2198-2212.
Christou et al., "Schottky Barrier Formation on Electron Beam Deposited Amorphous Si.sub.1-x GE.sub.x :H Alloys and Amorphous (Si/Si.sub.1-x GE.sub.x): H Modulated Structures," Appl. Phys. Lett., 48(6), Feb. 10, 1986, pp. 408-410.

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