Amorphous nitride release layers for imprint lithography,...

Plastic and nonmetallic article shaping or treating: processes – Mechanical shaping or molding to form or reform shaped article – Deforming the surface only

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C264S496000, C264S319000, C264S338000, C977S887000

Reexamination Certificate

active

08029716

ABSTRACT:
Amorphous inorganic nitrides are used as release layers on templates for nanoimprint lithography. Such a layer facilitates the release of a template from a cured, hardened composition into which the template has transferred a pattern, by reducing the adhesion energy between the release layer and the cured, hardened composition. The release layer may include one or more metallic or semiconductor elements such as Al, Mn, B, Co, Ti, Ta, W and Ge.

REFERENCES:
patent: 6387787 (2002-05-01), Mancini et al.
patent: 6533968 (2003-03-01), Feist et al.
patent: 6852454 (2005-02-01), Mancini et al.
patent: 7077992 (2006-07-01), Sreenivasan et al.
patent: 7140861 (2006-11-01), Watts et al.
patent: 2002/0135099 (2002-09-01), Robinson et al.
patent: 2002/0167117 (2002-11-01), Chou
patent: 2004/0033424 (2004-02-01), Talin et al.
patent: 2004/0124566 (2004-07-01), Sreenivasan et al.
patent: 2004/0141163 (2004-07-01), Bailey et al.
patent: 2005/0084804 (2005-04-01), Truskett et al.
patent: 2005/0146079 (2005-07-01), Chou
patent: 2006/0144274 (2006-07-01), Kolesnychenko et al.
patent: 2006/0144275 (2006-07-01), Kolesnychenko et al.
patent: 2006/0222968 (2006-10-01), Talin et al.
patent: 2006/0255505 (2006-11-01), Sandhu et al.
patent: 2006/0264048 (2006-11-01), Cabral et al.
patent: 2007/0048625 (2007-03-01), Nordquist et al.
patent: 96/34767 (1996-11-01), None
patent: WO 2007029482 (2007-03-01), None
patent: WO2007030528 (2007-03-01), None
W. De La Cruz, O. Contretras, G. Soto, E. Perez-Tijerina; Cobalt Nitride Produced by Reactive Pulsed Laser Deposition; Sep. 2006; Revista Mexicana De Fisca; 52(5); pp. 409-412.
H. Scmidt, W. Gruber, T. Gutberlet, M. Ay, J. Stahn, U. Geckle, M. Bruns; Structural Relaxation and Self-diffusion in Covalent Amorphous Solids: Silicon Nitride As A Model System; Aug. 23, 2007; Journal of Applied Physics; vol. 102; pp. 1-6.
Mahieu et al.; Mechanism of Preferential Orientation in Sputter Deposited Titanium Nitride and Yttria-Stabilized Zirconia Layers;2005;Journal of Crystal Growth;279;100-109.
Komuro et al, “Improvement of Imprinted Pattern Uniformity Using Sapphire Mold”, Jpn. J. Appl. Phys., Jun. 2002, pp. 4182-4185, Part 1, No. 6B, The Japan Society of Applied Physics, Japan.
Navabpour et al., “Evaluation of non-stick properties of magnetron-sputtered coatings for moulds used for the processing of polymers”, Surface and Coatings Technology, 2006, pp. 3802-3809, vol. 201, Issue 6, UK (Abstract only).
“Release Agents & Lubricants”, ESK Advanced Technical Ceramics, 2007 (Web page).
Altun et al., “Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography”, Nanotechnology, vol. 18, 2007, pp. 1-5, IOP Publishing, UK.
Houle et al., “Antiadhesion Considerations for UV Nanoimprint Lithography”, Applied Physics Letters, 2007, 213103-1-213103-3, vol. 90, Issue 21, American Institute of Physics, USA.
C.A. Mills et al., “Production of structures for microfluidics using polymer imprint techniques”, Microelectronic Engineering 78-79 (2005), pp. 695-700.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Amorphous nitride release layers for imprint lithography,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Amorphous nitride release layers for imprint lithography,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amorphous nitride release layers for imprint lithography,... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4289434

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.