Amorphous high-k thin film and manufacturing method thereof

Details Amorphous high-k thin film and manufacturing method thereof Amorphous high-k thin film and manufacturing method thereof

2008-05-27

2008-05-27

Purvis, Sue A. (Department: 2826)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C438S003000, C257S295000, C257S310000

Reexamination Certificate

active

11354013

ABSTRACT:
An amorphous high-k thin film for a semiconductor device and a manufacturing method thereof are provided. The amorphous high-k thin film includes Bi, Ti, Al, and O. Since a BTAO based amorphous dielectric thin film is used as a dielectric material of a DRAM capacitor, a dielectric constant is more than 25, and an increase of a leakage current caused in reducing a physical thickness of the dielectric thin film can be prevented. Accordingly, it is very useful for the integration of the semiconductor device.

REFERENCES:
patent: 2006/0131672 (2006-06-01), Wang et al.
A. Donnermeyer, “Complementary gratings due to electron and hole conductivity in aluminum-doped bismuth titanium oxide crystals”, Dec. 2003, www.physica-status-solidi.com, 3rd paragraph of the introduction.
G.D. Wilk et al., Journal of Applied Physics vol. 87, No. 1, Hafnium and ziconium silicates for advanced gate dielectrics pp. 484-492 Jan. 1, 2000.
M.H. Cho et al., Applied Physics Letters vol. 81, No. 6, Dielectric Characteristics of Al2O3-HfO2nanolaminates on Si(100) pp. 1071-1073 Aug. 5, 2002.
Hyo Sik Chang et al., Applied Physics Letter vol. 80, No. 18, Excellent thermal stability of Al2O3/ZrO/Al2O3stack structure for metal-oxide-semiconductor gate dielectrics application pp. 3385-3387, May 6, 2002.

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