Amorphous carbon-based non-volatile memory

Details Amorphous carbon-based non-volatile memory Amorphous carbon-based non-volatile memory

2005-12-28

2010-02-09

Clark, S. V (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S652000

Reexamination Certificate

active

07659205

ABSTRACT:
A resistance variable memory element and a method for forming the same. The memory element has an amorphous carbon layer between first and second electrodes. A metal-containing layer is formed between the amorphous carbon layer and the second electrode.

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