Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-11-06
2007-11-06
Pham, Thanhha S. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S198000, C438S406000, C438S486000
Reexamination Certificate
active
11142646
ABSTRACT:
The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. The process flow of the present invention solves two major difficulties not disclosed by prior art ATR methods: the creation of “corner defects” at the edges of amorphized Si regions bounded by trenches, and undesired orientation changes during a high temperature post-recrystallization defect-removal annealing of non-ATR'd regions not bounded by trenches. In particular, this invention provides a process flow comprising the steps of (i) amorphization and low-temperature recrystallization performed in substrate regions free of trenches, (ii) formation of trench isolation regions that subsume the defective regions at the edge of the ATR'd regions, and (iii) a high-temperature defect-removal anneal performed with the trench isolation regions in place.
REFERENCES:
patent: 7060585 (2006-06-01), Cohen et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2006/0154429 (2006-07-01), de Souza et al.
Fogel Keith Edward
Saenger Katherine L.
Sung Chun-Yung
Yin Haizhou
International Business Machines - Corporation
Pham Thanhha S.
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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