Ammonium chloride vaporizer cold trap

Details Ammonium chloride vaporizer cold trap Ammonium chloride vaporizer cold trap

1998-03-26

2000-08-22

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438905, 438958, 438963, 438791, 118715, 118724, H01L 2144, H01L 2131, B05C 1100, C23C 1600

Patent

active

061071986

ABSTRACT:
The present invention comprises means for sublimating and handling ammonium chloride (NH.sub.4 Cl) vapor, a bi-product of a silicon nitride growth process, thereby preventing backstreaming into the reactor and ingestion of vapor and particulates by the vacuum pump. The exhaust circuit comprises a novel combination of valves, sublimation and cold traps, cooling and heating elements to facilitate reduction of condensed NH.sub.4 Cl volume from a first path trap thus reducing maintenance, increasing production up-time and enhancing product yield.

REFERENCES:
patent: 4168741 (1979-09-01), Degenhardt et al.
patent: 5015503 (1991-05-01), Varrin, Jr. et al.
patent: 5250323 (1993-10-01), Miyazaki
patent: 5261963 (1993-11-01), Basta et al.
patent: 5536319 (1996-07-01), Wary et al.
patent: 5584963 (1996-12-01), Takahashi
patent: 5788747 (1998-08-01), Horiuchi et al.
patent: 5888579 (1999-03-01), Lun

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