Aminosilanes for shallow trench isolation films

Details Aminosilanes for shallow trench isolation films Aminosilanes for shallow trench isolation films

2011-08-16

2011-08-16

Ghyka, Alexander G (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S642000, C257SE21242, C106S287110

Reexamination Certificate

active

07999355

ABSTRACT:
The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of:providing a semiconductor substrate having high aspect ratio features;contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane;forming a film by spreading the liquid formulation over the semiconductor substrate;heating the film at elevated temperatures under oxidative conditions.Compositions for this process are also set forth.

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