Ambient gas treatment of porous dielectric

Details Ambient gas treatment of porous dielectric Ambient gas treatment of porous dielectric

2007-05-29

2007-05-29

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000, C257SE21241, C257SE21273, C257SE21293

Reexamination Certificate

active

10429984

ABSTRACT:
A method of modifying the porosity of a thickness of a layer of porous dielectric material having a surface and formed on a semiconductor substrate is provided by exposing the porous dielectric material to a sufficient temperature in the presence of a first gas to drive moisture particles out of the pores. Modifying also includes, exposing the porous dielectric material to a radio frequency stimulus of sufficient power in the presence of a second gas to densify a thickness of the porous dielectric material to reduce or prohibit subsequent absorption of moisture or reactant gas particles by the thickness or porous dielectric material.

REFERENCES:
patent: 6346490 (2002-02-01), Catabay et al.
patent: 6486061 (2002-11-01), Xia et al.

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