Aluminum plug process

Details Aluminum plug process Aluminum plug process

1998-02-09

1999-11-30

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438646, 257751, 257758, 20419225, H01L 214763, H01L 2129

Patent

active

059942134

ABSTRACT:
A new method of aluminum plug metallization in the manufacture of an integrated circuit device is described. An insulating layer is provided over the surface of a semiconductor substrate. At least one contact opening is provided through the insulating layer to the semiconductor substrate. A barrier metal layer is deposited over the surface of the insulating layer and within the contact opening. An aluminum layer is sputter deposited over the barrier metal layer and within the contact opening wherein a void is left within the contact opening. The aluminum layer is covered with a dielectric layer wherein the expansion coefficient of the dielectric layer is smaller than the expansion coefficient of the aluminum layer. The aluminum layer is reflowed using rapid thermal annealing wherein the overlying dielectric layer forces the aluminum layer to fill the contact opening completing the metallization in the fabrication of an integrated circuit device.

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"A Novel High Pressure Low Temperature Aluminum Plug Technology For Sub-0.5.mu.m Contact/Via Geometries", Dixit et al. IEDM 1994, pp. 5.3.1-5.3.4.
"A Novel 0.25.mu.m Via Plug Process Using Low Temperature CVD Al/TiN", Dixit et al. IEDM 1995, pp. 10.7.1-10.7.3.

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