Aluminum phosphate incorporation in silica thin films...

Details Aluminum phosphate incorporation in silica thin films... Aluminum phosphate incorporation in silica thin films...

2006-10-31

2006-10-31

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21576, C438S786000

Reexamination Certificate

active

07129189

ABSTRACT:
An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surface catalyzed vapor deposition (RVD). The method includes the following four principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a phosphate-containing precursor gas to form aluminum phosphate on the substrate surface; exposing the substrate surface to an aluminum-containing precursor gas to form a second substantially saturated layer of aluminum-containing precursor on the substrate surface; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.

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