Stock material or miscellaneous articles – Structurally defined web or sheet – Discontinuous or differential coating – impregnation or bond
Patent
1997-03-21
1999-07-27
Jones, Deborah
Stock material or miscellaneous articles
Structurally defined web or sheet
Discontinuous or differential coating, impregnation or bond
428901, 174257, 252515, 252518, 252521, 103 113, 103 118, B32B 1504
Patent
active
059287691
ABSTRACT:
This invention provides an aluminum nitride wiring substrate in which a wiring metal layer for forming a signal wiring layer is densified to micropattern a signal wiring portion of an aluminum nitride package incorporating a semiconductor element therein and to increase the signal processing speed of the semiconductor element itself, the electric resistance of the wiring metal layer is reduced while keeping high thermal conductivity and insulating characteristics inherent in the aluminum nitride material to make it possible to mount a high-speed and high-output semiconductor element, and the wiring metal layer is prevented from defective wire continuity, odd appearance, or etc, and a method for the production thereof. In an aluminum nitride wiring substrate comprising an aluminum nitride substrate and a wiring metal layer provided in at least either of the surface and the interior of the aluminum nitride substrate and formed by sintering the aluminum nitride wiring substrate and the wiring metal layer, the wiring metal layer contains manganese and at least one selected from the group consisting of copper, silver, a copper alloy, and a silver alloy.
REFERENCES:
patent: 4659611 (1987-04-01), Iwase et al.
patent: 4770953 (1988-09-01), Horiguchi et al.
patent: 4835039 (1989-05-01), Barringer et al.
patent: 4894273 (1990-01-01), Lieberman et al.
patent: 5063121 (1991-11-01), Sato et al.
patent: 5167869 (1992-12-01), Nebe et al.
patent: 5229213 (1993-07-01), Horiuchi et al.
patent: 5641718 (1997-06-01), Horiguchi et al.
patent: 5804288 (1998-09-01), Monma
Asai Hironori
Monma Jun
Jones Deborah
Kabushiki Kaisha Toshiba
Lam Cathy F.
LandOfFree
Aluminum nitride wiring substrate and method for production ther does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Aluminum nitride wiring substrate and method for production ther, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum nitride wiring substrate and method for production ther will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-876664