Aluminum nitride single crystal growth from a molten mixture wit

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

23300, 23296, 23305A, 423412, C01F 700, B01J 1706

Patent

active

039335739

ABSTRACT:
A method for growing single crystals which utilizes calcium nitride as a solvent system in the molten solution growth of bulk aluminum nitride crystals.

REFERENCES:
patent: 3450499 (1969-06-01), Yates
Taylor et al., Journal of the Electrochemical Society, Apr. 1969, "Some Properties of AIN", pp. 308 to 314.
Cox et al., J. Phys. Chem. Solids, 1967, "On the Preparation, Optical Properties and Electrical Behavior of AIN", Vol. 28, pp. 543 to 548.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Aluminum nitride single crystal growth from a molten mixture wit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Aluminum nitride single crystal growth from a molten mixture wit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum nitride single crystal growth from a molten mixture wit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1694878

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.