Aluminum metallization doped with iron and copper to prevent ele

Details Aluminum metallization doped with iron and copper to prevent ele Aluminum metallization doped with iron and copper to prevent ele

1993-01-05

1993-09-07

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 257762, 257765, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

052432211

ABSTRACT:
Stress induced grain boundary movement in aluminum lines used as connections in integrated circuits is substantially avoided by doping the aluminum with iron. Through this expedient not only is grain boundary movement avoided but electromigration problems are also decreased.

REFERENCES:
patent: 3725309 (1973-04-01), Ames et al.
patent: 3900598 (1975-08-01), Hall et al.
patent: 4268584 (1979-12-01), Ahn et al.
patent: 5019891 (1991-05-01), Onuki et al.

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