Aluminum metal line of a semiconductor device and method of...

Details Aluminum metal line of a semiconductor device and method of... Aluminum metal line of a semiconductor device and method of...

2006-12-28

2009-02-24

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S645000, C438S694000

Reexamination Certificate

active

07494921

ABSTRACT:
A method of forming an aluminum line of a semiconductor device where first A metal thin layer, a first aluminum layer, and a first B metal thin layer are sequentially applied on an interlayer insulating layer. A photolithography process is performed to form a metal line pattern, and etching is performed thereon. An intermetallic dielectric layer is applied on the metal line pattern. The first B metal thin layer is removed by a chemical mechanical planarization process to form a first stage metal line. A second aluminum layer and a second metal thin layer are sequentially applied. Photoresist is applied, a photolithography process is performed to form a metal line pattern, and etching is performed to form a second stage metal line. An intermetallic dielectric layer is applied on the second stage metal line. A chemical mechanical planarization process is performed on the second intermetallic dielectric layer.

REFERENCES:
patent: 6319727 (2001-11-01), Vlassak
patent: 6346480 (2002-02-01), Yamamoto et al.
patent: 6383914 (2002-05-01), Yasuda
patent: 6528414 (2003-03-01), Kasuya

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