Aluminum interconnects with metal silicide diffusion barriers

Details Aluminum interconnects with metal silicide diffusion barriers Aluminum interconnects with metal silicide diffusion barriers

2006-06-06

2006-06-06

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S387000

Reexamination Certificate

active

07057285

ABSTRACT:
An aluminum interconnect which extends adjacent to and is insulated from a stacked capacitor structure to facilitate electrical communication between an active device region of a semiconductor substrate of a semiconductor device structure and a bit line extending above the semiconductor substrate. The aluminum interconnect is disposed within a trench and may include a metal silicide layer adjacent the active device region to form a buried metal diffusion layer. The aluminum interconnect may also include a metal nitride layer disposed between the metal silicide and aluminum. The invention also includes methods of fabricating aluminum interconnects adjacent stacked capacitor structures and semiconductor device structures which include the aluminum interconnects.

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