Aluminum-filled self-aligned trench for stacked capacitor struct

Details Aluminum-filled self-aligned trench for stacked capacitor struct Aluminum-filled self-aligned trench for stacked capacitor struct

1998-06-22

2000-12-26

Smith, Matthew

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438244, 438655, H01L 2120

Patent

active

061658634

ABSTRACT:
An aluminum interconnect which extends adjacent to and is insulated from a stacked capacitor structure to facilitate electrical communication between an active device region of a semiconductor substrate of a semiconductor device structure and a bit line extending above the semiconductor substrate. The aluminum interconnect is disposed within a trench and may include a metal silicide layer adjacent the active device region to form a buried metal diffusion layer. The aluminum interconnect may also include a metal nitride layer disposed between the metal silicide and aluminum. The invention also includes methods of fabricating aluminum interconnects adjacent stacked capacitor structures and semiconductor device structures which include the aluminum interconnects.

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