Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-09
2007-01-09
Graybill, David E. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S388000, C257S410000, C257S765000, C257S770000, C257S764000, C257S763000
Reexamination Certificate
active
10289550
ABSTRACT:
Aluminum-containing films having an oxygen content within the films. The aluminum-containing film is formed by introducing hydrogen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
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Raina Kanwal K.
Wells David H.
Graybill David E.
Micro)n Technology, Inc.
TraskBritt PC
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