Aluminum based conductor for via fill and interconnect

Details Aluminum based conductor for via fill and interconnect Aluminum based conductor for via fill and interconnect

2006-03-20

2008-11-18

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S688000, C257SE21585

Reexamination Certificate

active

07452805

ABSTRACT:
A semiconductor device including a dielectric layer having a opening form therein having a cross-sectional area of less than 1 μm2and a PVD aluminum base conductor filled in the opening.

REFERENCES:
patent: 5956609 (1999-09-01), Lee et al.
patent: 6329282 (2001-12-01), Hsu et al.

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