Aluminum alloy electrode for semiconductor devices

Details Aluminum alloy electrode for semiconductor devices Aluminum alloy electrode for semiconductor devices

1994-07-27

1996-05-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257771, H01L 2354

Patent

active

055149090

ABSTRACT:
Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150.degree. to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.

REFERENCES:
patent: 4477793 (1984-10-01), Mukae et al.
patent: 4775814 (1988-10-01), Yuhara et al.
patent: 4941032 (1990-07-01), Kobayashi et al.
patent: 5229626 (1993-07-01), Ebitani et al.
patent: 5284532 (1994-02-01), Skinner
patent: 5296653 (1994-03-01), Kiyota et al

Affiliated with

Also associated with

Rating

Aluminum alloy electrode for semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Aluminum alloy electrode for semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum alloy electrode for semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1229025