Aluminum alloy containing copper, silicon and titanium for VLSI

Details Aluminum alloy containing copper, silicon and titanium for VLSI Aluminum alloy containing copper, silicon and titanium for VLSI

1989-12-04

1991-03-12

Roy, Upendra

Alloys or metallic compositions

Aluminum base

Copper containing

148438, 428650, 437 14, 437194, 437197, H01L 2348, B32B 1504

Patent

active

049991604

ABSTRACT:
An improved aluminum alloy from which interconnect lines of VLSI integrated-circuit devices may be fabricated. The alloy, which is comprised of aluminum, copper, titanium and silicon, is not only resistant to electromigration and stress cracking, but produces silicon precipitate crystals which are much finer that those produced by aluminum-copper-silicon alloys under the hot-and-cold temperature cycling that is required by contemporary semiconductor fabrication processes. These fine silicon precipitate crystals are much less likely to destroy the electrical continuity of an alloy-to-silicon junctions within an integrated-circuit device, even where dimensions of such junctions have been reduced. Although other alloy proportions are usable, optimal alloy percentages are deemed to be 0.5 to 3 percent copper by weight and 0.05 to 1 percent titanium by weight, the percentage of silicon by weight being determined by the saturation concentration of the alloy at the maximum process temperature (generally within a range between 0.5 to 2 percent).

REFERENCES:
patent: 4401489 (1983-08-01), Arai et al.
patent: 4527184 (1985-07-01), Fischer
patent: 4566177 (1986-01-01), Van De Ven et al.
patent: 4704369 (1987-11-01), Alvis et al.
patent: 4828794 (1989-05-01), Scott et al.
patent: 4902582 (1990-02-01), Inoue
Gardner et al., in Proc. IEEE--VLSI--Conf., 1984, p. 68.
Rey et al., Ibid, p. 139.

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