Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-06-30
2009-12-29
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S753000, C257S762000, C257S773000, C257S711000, C257S775000, C257SE23106, C257SE23160
Reexamination Certificate
active
07638877
ABSTRACT:
In some embodiments, an alternative to desmear for build-up roughening and copper adhesion promotion is presented. In this regard, a substrate in introduced having a dielectric layer, a plurality of polyelectrolyte multilayers on the dielectric layer, and a copper plating layer on the polyelectrolyte multilayers. Other embodiments are also disclosed and claimed.
REFERENCES:
patent: 7081674 (2006-07-01), Ganapathiraman et al.
“pH-Gated Porosity Transitions of Polyelectrolyte Multilayers in Confined Geometries and Their Application as Tunable Bragg Reflectors”, Lei Zhai et al., pp. 6113-6123, vol. 37. No. 16, 2004.
“Ink-Jet Printing, Self—Assembled Polyelectrolytes, and Electroless Plating: Low Cosr Frabrication of Circuits on a Flexible at Room Temperature.”, Kevin Cheng et al., pp. 247-250, 2004.
U.S. Appl. No. 11/441,841, filed May 6, 2006, Nalla, et al.
Mendelsohn, J.D., et al., “Fabrication of Microporous Thin Films from Polyelectrolyte Multilayers”,Langmuir 16:5017-5023, (2000).
Jomaa Houssam
Tsau Christine
Clark Jasmine J
Guglielmi David L.
Intel Corporation
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