Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Implanting to form insulator
Patent
1996-11-14
1999-06-15
Niebling, John F.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Implanting to form insulator
438760, 438783, H01L 2126, H01L 2131
Patent
active
059131314
ABSTRACT:
An interlevel dielectric and a method for making same wherein boron is introduced into the dielectric though an implantation process. During the implantation process, either the boron-10 or the boron-11 boron isotope may be selected and introduced into the dielectric. Boron is introduced to make the dielectric flow at lower temperatures. Selectively implanting boron-10 or boron-11 during implantation, as opposed to buying boron comprising a specific boron isotope from a supplier and introducing boron during CVD, lowers the production costs. Furthermore, by introducing boron into the dielectric during the implantation process as opposed to during deposition of the dielectric during a CVD process, the dielectric layer is free of boron bumps. Boron-bearing dielectrics can be made to made to flow at lower temperatures than dielectrics which do not contain boron. Furthermore, boron-11 can be introduced exclusively into the dielectric during the implantation process to eliminate soft errors caused by the formation of alpha particles. Boron-10 is a major source of alpha particles formed in a nuclear reaction between boron-10 and cosmic ray neutrons.
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Crawford, Jr. Franklin D.
Hossain Tim Z.
Tiffin Don A.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Kowert Robert C.
Lebentritt Michael S.
Niebling John F.
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