Alternative methods for fabrication of substrates and...

Details Alternative methods for fabrication of substrates and... Alternative methods for fabrication of substrates and...

2011-02-22

2011-02-22

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S683000, C438S960000, C257SE21438, C257SE21439

Reexamination Certificate

active

07892970

ABSTRACT:
The present invention relates to alternative methods for the production of crystalline silicon compounds and/or alloys such as silicon carbide layers and substrates. In one embodiment, a method of the present invention comprises heating a porous silicon deposition surface of a porous silicon substrate to a temperature operable for epitaxial deposition of at least one atom or molecule, contacting the porous silicon deposition surface with a reactive gas mixture comprising at least one chemical species comprising a group IV element and at least one silicon chemical species, and depositing a silicon-group IV element layer on the porous silicon deposition surface. In another embodiment, the chemical species comprising a group IV element can be replaced with a transition metal species to form a silicon silicide layer.

REFERENCES:
patent: 6136699 (2000-10-01), Inoue
patent: 6221762 (2001-04-01), Byun et al.

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